Method and apparatus for processing substrates

ABSTRACT

A substrate consisting of a plurality of individual substrates and a photo-curable adhesive layer interposed there between is irradiated by a curing light, and the deflection of the substrate is controlled by controlling the temperature. The step for controlling the deflection includes the steps of finding the temperature difference ΔT between the temperature Th of a mounting table and the temperature Td of the substrates before curing; finding deflection difference ΔX between the deflection X of the substrates after curing and the target deflection setting value Xt; finding the temperature Tc by Tc=ΔT−10. M×ΔX by using the constant of proportionality M; and controlling the temperatures of at least one of the substrates before curing and the mounting table according to the temperature Tc such that Tc=Th−Td.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method and apparatus for processingsubstrates while controlling the deflection (amount of warping or tiltangle) that occurs in the substrates during bonding of the individualsubstrates of, for example, optical disc substrates so as to attain adesired deflection.

Priority is claimed on Japanese Patent Application No. 2003-433599,filed Dec. 26, 2003, the content of which is incorporated herein byreference.

2. Description of Related Art

An optical disc for a DVD is known wherein two individual substrateshaving a recording layer, or one individual substrate having a recordinglayer and one individual substrate not having a recording layer, or anindividual substrate having a recording layer and a sheet film, or oneindividual substrate and another individual substrate (here, these arealso referred to as “individual substrates”) are bonded together byhaving interposed a photo-curable adhesive layer therebetween (forexample, refer to Japanese Unexamined Patent Application, FirstPublication No. Hei 5-20714).

To read the data recorded on an optical disc or to record the data on anoptical disc, the optical disc is irradiated externally by a laser whilethe optical disc is rotated, and the laser irradiates the recordinglayer by penetrating the transparent substrates of the optical disc.Because the recording density of the optical disc is extremely high, thelaser must irradiate the recording layer with high precision. If theflatness of the optical disc is substandard, naturally the flatness ofthe recording layer will also become substandard. The laser will not beable to irradiate the recording layer in correct alignment with apredetermined position, and errors will occur when writing and readingthe data. For this reason, when manufacturing the optical disc,generally there must not be warping or distortion and that a high degreeof flatness can be maintained.

Various inventions have been proposed as methods for decreasing suchwarping during the manufacture of an optical disc. In one of these, amethod is proposed in which the heat of the substrates, whosetemperature has risen due to the irradiation of the curing light duringthe bonding of the individual substrates, is dissipated into themounting table on which the substrates is mounted. After the ambienttemperature and the temperature of the substrates have becomesubstantially equal, the substrates are removed from the mounting table.In this method, this mounting table is cooled by using a cooling mediumsuch as air or cooled water, and thereby the temperature of this coolingmedium is controlled (for example, refer Japanese Unexamined PatentApplication, First Publication No. Hei 10-199053).

Another method has been proposed wherein the mounting table on which thesubstrates are mounted is cooled so as to maintain a constanttemperature (for example, refer to Japanese Unexamined PatentApplication, First Publication No. 2003-99985).

In another invention that decreases the warping during the manufacturingof an optical disc described above have been proposed. The inventionincludes a method has been proposed wherein the temperature of at leastone of the surfaces of the substrates is controlled while thephoto-curable adhesive layer interposed between the individualsubstrates of the optical disc is being cured, and thereby thetemperature of both surfaces is controlled; a method has been proposedwherein the temperature of the substrates is controlled, and thereby thetemperature distribution in both directions of the substrates is madeuniform; and an apparatus has been proposed that provides a temperaturecontrol device that can adjust the surface temperature of a mountingtable (for example, refer to Japanese Unexamined Patent Application,First Publication No. 2000-76710).

However, due to increasing the flatness of the optical disc because ofimplementing the methods described above during manufacture of theoptical disc, even if the optical disc possesses the required flatnessimmediately after its manufacture, during the subsequent storage,management, and distribution, the optical disc may warp in a predictablemanner. For example, warping may occur due to label printing afterbonding. In such a case, it is necessary to control the warping of theoptical disc by taking into account the warping of such an optical discduring the final usage, and compensating warping must be intentionallyapplied to the optical disc so that almost no warping is present duringthe final usage.

In consideration of the problems described above, it is an object of thepresent invention to control the deflection (tilt angle) of the opticaldisc during manufacture so as to attain a target deflection.

SUMMARY OF THE INVENTION

In the processing method and processing apparatus for the substrates ofthe present invention, the temperature difference ΔT° C. (=Th−Td) isfound between measured temperature Td of the substrates consisting of aplurality of superposed individual substrates after interposing anuncured photo-curable adhesive layer therebetween and the measuredtemperature Th of a mounting table on which these substrates aremounted, and at the same time the measured deflection X (deg) of thesubstrates is found, and a plurality of these (ΔT and X) are plotted.The result thereof is a straight line that represents a linear function,and the slope thereof is the constant of proportionality M (° C./deg).

Using this constant of proportionality M, when one or both of a mountingtable and the substrates are temperature controlled using the controltemperature found by calculating according to the equation (Th−Td)−M×(ΔXor ΔX′) or the equation Th−M×(ΔX or ΔX′), it is possible to obtainsubstrates having a desired warping. Xt is the target deflection for thesubstrates and X is the measured deflection. In addition, ΔX=Xt−X, andΔX′ is the compensated value obtained by compensating ΔX. Thiscompensation is carried out by taking into account the tendency of ΔX orthe like, for example, whether or not the direction of the increase ordecrease is increasing or decreasing according to a linear, secondorder, or a higher order curve.

According to the substrate processing method and processing apparatus ofthe present invention, it is possible to provide a substrate consistingof bonded individual substrates having a desired deflection (tiltangle).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a drawing for explaining the insight on which the presentinvention is based, and shows the method for finding the constant ofproportionality M (° C./deg).

FIG. 2 is a drawing showing the relationship between Th−Td, and thedeflection X of the substrates, where Th is the temperature of themounting table for the substrates and Td is the temperature of thesubstrates.

FIG. 3 is a drawing for explaining the basic conception of the presentinvention.

FIG. 4 is a drawing showing part of the bonding line 100 of the opticaldisc substrates that is an embodiment of the present invention.

FIG. 5 is a drawing showing the basic arrangement of the structure forcontrolling the deflection of the substrates.

FIG. 6 is a drawing for explaining the temperature control according toan embodiment of the present invention.

FIG. 7 is a drawing for explaining the temperature control apparatusused in an embodiment of the present invention

FIG. 8 is a drawing showing a flowchart of the operation of anembodiment of the present invention.

FIG. 9 is a drawing showing the relationship between the flowchart inFIG. 7 and (deflection X of the substrates—time).

FIG. 10 is a drawing showing the bonding line 200 of the optical discsubstrates that is another embodiment of the present invention.

FIG. 11A and FIG. 11B are drawings showing an example of the mountingtable used in the present invention.

FIG. 12 is a cross-sectional drawing of the substrates showing thedefinition of the deflection.

DETAILED DESCRIPTION OF THE INVENTION

First, the new insight on which the present invention is based will beexplained before explaining a first embodiment of the preferredconfiguration for implementing the present invention.

As shown in FIG. 1, the inventors of the present invention (a) measuredthe temperature Td of the optical disc substrates (below, referred to asthe “substrates”) before being mounted on the mounting table, where thesubstrates consisting of a plurality of individual substrates superposedafter interposing an uncured photo-curable adhesive layer therebetween.In addition, the inventors (b) measured the temperature Th of themounting table on which the substrates are mounted before irradiating acuring light such as UV light. As shown in FIG. 1, the inventors (c)found the temperature difference ΔT (° C.)(=Th−Td) between thetemperature Td and the temperature Th, and (d) found the deflection X(deg) of the substrates D after curing when the temperature hassubstantially fallen to room temperature after curing the photo-curableadhesive layer by irradiating a curing light on the substrates beforecuring. Note that, as shown in FIG. 12, the deflection (tilt angle)denotes the angle θ formed by the normal that is perpendicular to therecording surface of the substrates and the axis of the optical system.

The basic insight was attained that, for a plurality of substrates, asshown in FIG. 2, the results of (e) plotting of the deflection X (deg)and the plurality of temperature differences ΔT (° C.) show that therelationship between the deflection X and the temperature difference ΔTfits a linear function M′, which is a substantially proportionalrelationship. The slope of this linear function M′ serves as theconstant of proportionality M (° C./deg). Based on many experimentalresults, a section of the linear function M′ changes depending on thecondition of the warping of the bonded individual substrates, but theslope, that is, the constant of proportionality M, is substantiallyunchanged. Therefore, it was confirmed that by using the constant ofproportionality M and the linear function M′, when controlling thedifference between the temperature of a mounting table and temperatureof the substrates, the deflection (tilt angle) of the substrates canattain a desired value by using this temperature difference. Inparticular, by using a constant of proportionality M within a range from15 (° C./deg) to 40 (° C./deg), that is, 15 (° C./deg)≦M≦40 (° C./deg),the deflection of the bonded substrates can attain a desired value in ashort period of time.

Embodiment 1

The basic embodiment of the processing method and processing apparatusfor the substrates according to the present invention will be explainedwith reference to FIG. 3 to FIG. 7. FIG. 3 is a drawing for explainingthe basic conception of the present invention. FIG. 4 is a drawingshowing the optical disc bonding device 100 according to an embodimentfor explaining the control of the deflection X of the substrates, andFIG. 5 shows a schematic drawing of the mechanism that controls thedeflection of the bonded substrates which, in the present embodiment,are substrates consisting of a plurality of individual substrates thathave been bonded together. FIG. 6 is a drawing for explaining basicarrangement of a preferable example of the temperature control apparatusthat controls the warping of the substrates, and FIG. 7 is a drawingthat shows the block structure of the temperature control apparatus thatcontrols the deflection of the substrates.

The basic conception of the present invention will be explained withreference to FIG. 3. Assuming that the deflection of a substrates is X1when the measured temperature of the mounting table is Th1 and themeasured temperature of the substrates is Td1, then Th1−Td1=ΔT1, and asshown in FIG. 3, the point (X1, ΔT1) on the linear function M′ is shownby M1.

In order for the deflection X1 of the substrates to be made equal to adesired target deflection Xt, as shown by the dashed line, it issufficient that the temperature Th2 of the mounting table and thetemperature Td2 of the substrates satisfy the temperature differenceΔT2=(Th2−Td2), which corresponds to point M2 on the linear function M′at the target deflection Xt of the substrates. At this time, thedifference (ΔT1−ΔT2) between ΔT1 and ΔT2 becomes M (Xt−X1). Expressed asan equation, this becomes (ΔT1−ΔT2)=M (Xt−X1). From this equation, itcan finally be deduced that (Th2−Td2)=(Th1−Td1)−M (Xt−X1). (Th1−Td1)denotes the temperature difference ΔT1, which is obtained by subtractingthe measured temperature Td1 of the substrates from the measuredtemperature Th1 of the mounting table, and X1 denotes the deflection ofthe substrates after curing at that time, and thus each of these are aknown numerical value at the point in time that they are measured.

Therefore, it is understood that it is sufficient that either one orboth of the temperature Th2 of the mounting table and the temperatureTd2 of the substrates are controlled so as to satisfy the principalequation (Th2−Td2)=(Th1−Td1)−M (Xt−X1). When expressed by thetemperature Th of the mounting table and the temperature Td of thesubstrates, this function can be simplified to (Th−Td)=Tc=ΔT−M×(ΔX orΔX′). Below, this function will serve as the principal function. Here,ΔT denotes the temperature difference between the temperature Th of amounting table and the temperature Td of the substrates measured whenfinding the point M1, and ΔX denotes the difference between the desiredtarget deflection Xt and the measured deflection X. As described above,ΔX′ is the compensated value obtained by compensating ΔX. Thiscompensation takes into account whether or not the tendency of ΔX, forexample, the direction of increase or decrease, increases or decreasesas a linear, a second order, or a higher order curve. In embodiment 1,only the temperature of the mounting table is controlled.

As shown in FIG. 4, two individual substrates (not illustrated) aresuperposed having a photo-curable adhesive layer interposedtherebetween, and by eliminating the excess photo-curable adhesive by aspinner apparatus 1, the superposed substrates d having uncured adhesiveinterposed therebetween are obtained. While the substrates d are beingtransferred to the turntable 3 from the spinner apparatus 1, thetemperature Td of the substrates is measured by a general method inwhich a substrate temperature measuring device such as an infrared lighttemperature sensor (not illustrated) is used. The substrates d aremounted on the mounting table 5 a among the plurality of mounting tables5 a to 5 j, which are disposed in sequence at fixed intervals on theturn table 3. The turntable 3 rotates intermittently in the direction ofthe arrow (clock) at a constant speed.

The measurement of the temperature Th of each of the mounting tableswhen located at the position of mounting table 5 a is carried out byusing a general method, such as an infrared light temperature sensor(not illustrated), or a mounting table temperature measuring device suchas a thermocouple (not illustrated). The substrates d are mounted on themounting table 5 a, and the individual substrate among the substrates dthat is on the side in contact with the mounting table 5 a expands orcontracts due to the temperature Th of the mounting table. While theadhesive between the individual substrates is uncured, it is possible tochange the shape of the individual substrates on the side in contactwith the mounting table 5 a comparatively freely. Note that here 5 a to5 j are considered to be the mounting tables positioned at mountingposition.

At the mounting tables 5 a to 5 j, a cooling and heating mechanism 7that serves as the temperature control device of the mounting tables 5is provided. At the mounting positions 5 h, 5 i, 5 j, 5 a, and 5 b inthe temperature adjustment area 6, adjustment of the temperature of amounting table is carried out so as to adjust the difference between thetemperature of the mounting table and the temperature of the substrates.Next, the temperature adjustment of a mounting table will be explained.

The uncured photo-curable adhesive layer of the substrates d isirradiated by a curing light such as ultraviolet light from a curinglight irradiating apparatus 9 and photo-cured to make the bondedsubstrates D, in which the individual substrates are completely bonded.When the temperature has fallen to room temperature, the necessary testsare carried out on substrates D by a testing apparatus 11. One among thetests is the measurement of the deflection X of the substrate D.

An example of the basic preferable arrangement of the temperaturecontrol apparatus 13 will be explained with reference to FIG. 6. Thetemperature control apparatus 13 calculates the target deflection Xt ofthe input substrates D and the deflection X of the substrates D found bycarrying out the warping tests, and finds the deflection difference ΔX,which is the difference therebetween. This deflection difference ΔX iscompensated by the compensating device 13 k. A compensating device 13 kthat employs a widely used PID control method is explained as apreferable example. This PID control method outputs a compensated valueΔX′. The ΔX′ is a value compensated by a device k1 that carries outproportional control action, in which an output signal is output that isproportional to the deviation between the target value and the measuredvalue; a device k2 that carries out integral control action, in which anoutput signal is output that is proportional to the time integral of thedeviation; and a device k3 that carries out derivative control action,in which an output signal is output that is proportional to the rate ofchange of the deviation as a function of time, depending on whether thetendency of the deflection difference ΔX described above is, forexample, is a linear function that is a function of time, a second orderfunction that is a function of time, or another function. Thecalculation of Tc=ΔT−M×ΔX′ described above is carried out by thecalculating unit 13 m of the temperature control apparatus 13, andtemperature adjustment of the cooling and heating mechanism 7 is carriedout such that the deflection X of the substrates smoothly and quicklyapproaches the target deflection Xt.

Note that in the above explanation, the compensation device 13 kcompensated the deflection difference ΔX by PID control, but othersuitable control methods besides PID control can be used.

A detailed example of the temperature control apparatus 13 will beexplained with reference to FIG. 7. The deflection X that has been inputinto the temperature control apparatus 13 is input into a firstdeflection calculating unit 13B via a gate C1 of a gate unit 13A, andcalculated. The first deflection calculating unit 13B finds the pureaverage value of the deflection X of a predetermined number ofsubstrates D or the average value of the deflection X within anallowable range (below, these are referred to as the average deflectionXa).

In addition, a desired target deflection Xt is input into the deflectionsetting unit 13C of the temperature control apparatus 13 as a referencevalue, and set. This desired target deflection Xt is determined takinginto consideration that this deflection in the finished disc is zero orlies within an allowable range. Next, in the deflection calculation anddetermination unit 13D of the temperature control apparatus 13, acalculation is carried out to find the deflection difference ΔX, whichis the difference between the average deflection Xa described above andthe desired target deflection Xt described above. Preferably, thisdeflection difference ΔX is compensated by the compensation device asdescribed above, but because compensation is not always necessary, thecompensation device has been omitted in the temperature compensationdevice 13 shown in FIG. 7. However, of course during calculation of thetemperature Tc, this compensated value ΔX′ can be used instead of thedeflection difference ΔX.

In the proportionality constant setting unit 13E of this temperaturecontrol apparatus 13, the constant of proportionality M found asdescribed above is registered. It should be possible to select theconstant of proportionality M within a range of 15 (° C./deg)≦M≦40 (°C./deg) or should be set to a suitable value within the range of 15 (°C./deg)≦M≦40 (° C./deg), for example, the substantially intermediatevalues 27 or 28 (° C./deg).

When describing the constant of proportionality M, in the case of aconstant of proportionality M within the range 15 (° C./deg)≦M≦40 (°C./deg), the deflection X of the substrates D can be controlled so as toattain a target deflection Xt in a short period of time. However, theconstant of proportionality M is a constant that converts the deflectionX of the substrates D to a temperature, and when this constant ofproportionality M deviates from the optimal value by becoming smaller,the response of the convergence to the target deflection Xtdeteriorates. Contrariwise, when the constant of proportionality becomeslarge, the response of the convergence to this target deflection Xtbecomes rapid, but oscillation occurs easily, and convergence takestime. In the present embodiment, in the case that the constant ofproportionality M is smaller than 15 (° C./deg), the deflection X of thesubstrates D slowly approaches the target deflection Xt by usingtemperature control, and thus a long time is required to reach thetarget deflection Xt, making this constant of proportionality difficultto use in an actual bonding line. In addition, in the case that theconstant of proportionality M is larger than 40 (° C./deg), thedeflection X of the substrates D approaches the target deflection Xt ina short time, but the target deflection Xt oscillates vertically off thecenter, a long time is required to converge on the target deflection Xt,making this constant of proportionality difficult to use in an actualbonding line.

At the same time, in the temperature difference calculation unit 13F ofthe temperature control apparatus 13, the measured value Th of themounting table 5 a and the measured temperature Td of the substrates dbefore being mounted on the mounting table are input, the temperaturedifference calculating unit 13F carries out the calculation of (Th−Td),and the signal for the temperature difference ΔT, which is the result ofthis calculation, is output. The temperature control calculating unit13G that finds the temperature Tc, which changes the deflection X so asto attain the target deflection Xt, carries out the calculation of(ΔT−M×ΔX) by the function described above by using the constant ofproportionality M from the proportionality constant setting unit 13E,the temperature difference ΔX from the deflection calculation anddetermination unit 13D, and the temperature difference ΔT from thetemperature difference calculating unit 13F, and finds the temperatureTc, which is the difference between the temperature Th of a mountingtable and the temperature Td of the substrates d. A temperature commanddirecting whether to raise, lower, or maintain a temperature at acertain ° C. depending on this temperature Tc is sent to the cooling andheating mechanism 7. This temperature command directs how many ° C. tochange the temperature command currently provided.

The cooling and heating mechanism 7 provides an electricity-temperatureconversion element (not illustrated) such as a Peltier element on thesurface of each of the mounting tables under the substrates, and thetemperature adjustment can be carried out by using the electricalsignal. The temperature adjustment of a mounting table 5 shown in FIG. 5is carried out according to the temperature control amount Tc describedabove in the temperature adjustment area 6, which includes the mountingpositions 5 h, 5 i, 5 j, 5 a, and 5 b, as shown in FIG. 4. The reasonthat five mounting tables are present in the temperature adjustment area6 is due to taking into consideration the speed of the temperaturechange of a mounting table 5 and the time required for a mounting table5 to transit the temperature adjustment area 6. In the case that thetime-lag of the temperature adjustment of a mounting table 5 is a minorproblem, one or two mounting tables may be present in the temperatureadjustment area 6.

By adjusting the temperature of a mounting table in this manner, thecontrol of the temperature difference ΔT between the temperature Th of amounting table 5 and the temperature Td of the substrates d is carriedout and thereby the deflection of the substrates D is controlled. Therelationship between the warping of the substrates D and the temperatureis that when the temperature of the substrates d rises, the warping ofthe substrates D becomes concave, and when the temperature of thesubstrates d falls, the warping of the substrates D becomes convex. Thatis, when the temperature of the substrates d changes, the deflection anddirection change.

The operation will be explained with reference again to FIG. 4. Atemperature adjustment area 10 is provided downstream of the curinglight irradiating apparatus 9 for making the temperature of thesubstrates D equal to room temperature. This temperature adjustment area10 is also provided in other generally used bonding apparatuses forindividual substrates, and will not be explained in detail. However, ina cooling and heating mechanism that uses an electricity-heat conversionelement or the like, the cooling time per unit temperature requiresabout 2.5 more time than the heating time, and thus the method ofcooling adjusts the temperature difference ΔT so as to attain apredetermined value in a short period of time such that the temperatureof the substrates D in this temperature adjustment area 10 attains roomtemperature or a temperature that is somewhat lower than the controltemperature of the cooling and heating mechanism 7 at that time.

The substrates D are discharged before being conveyed to the temperatureadjustment area 10 or discharged at the mounting position as shown inthe figure and naturally cooled at a cooling position (not illustrated).While the temperature has fallen to room temperature, the substrates Dare tested by the testing apparatus 11. The data for the deflection Xfound by the testing apparatus 11 is sent to the temperature controlapparatus 13, as described above, and an operation such as thatdescribed above is repeated. The term “room temperature” denotes theambient temperature of the substrates D, and indicates the temperatureof the room when the substrates D are in the atmosphere of a room orindicates the temperature of the atmosphere when the substrates D aresurrounded by the atmosphere in an apparatus.

According to embodiment 1, the deflection of the bonded substrates Dafter adhesive curing can attain a desired value by controlling thetemperature of a mounting table 5 as described above, adjusting thedifference between the temperature of a mounting table 5 and thetemperature of the substrates d, and controlling the deflection of thesuperposed substrates d by this adjusted temperature difference.

Embodiment 2

A second embodiment will be explained with reference to FIG. 5 to FIG.11B. FIG. 5, FIG. 6 and FIG. 7 have been described above, and theirexplanation will be omitted. FIG. 8 is a drawing showing a flowchart forexplaining the control of the deflection X of substrates. FIG. 9 is adrawing showing the relationship between the change in warping of thesubstrates and time. FIG. 10 is a drawing sowing the optical discbonding apparatus 200 according to another embodiment of the presentinvention. FIGS. 11A and 11B show an example of the mounting table whichcan be used in the optical disc bonding apparatus shown in FIGS. 4 and10. The steps S1 to S9 described below correspond to steps S1 to S9 inthe flowchart in FIG. 8.

In activating the bonding line for the substrates, first in step S1 thetarget deflection Xt, which is the warping target value for thesubstrates D, is input into the temperature control apparatus 13, andset in the deflection setting unit 13C. At the same time, the initialtemperature of a mounting table 5 is set in the temperature control unit13H. Past values close to room temperature, for example, are used asthis initial temperature.

In step S2, the cooling and heating mechanism 7 is controlled so as tomaintain this initial temperature, and then the temperature of amounting table 5 has stabilized at the initial temperature, the bondingline for the substrates is activated as shown in FIG. 10. This stand-bytime is, for example, about 10 to 30 seconds. After passage of thestand-by time, as described in embodiment 1, the substrates d superposedat the spinner apparatus 1 are held by suction to a single transfer arm15 that carries out a left to right turning operation, and then they areconveyed from the spinner apparatus 1 to a mounting table 5. In the casethat it is necessary to measure the temperature Td of the substrates d,the temperature Td of the substrates d is measured during the conveyanceof the substrates d by a substrate temperature measuring device 17 suchas an infrared temperature sensor provided on the transfer arm 15.

A mounting table 5 has the structure shown, for example, in FIG. 11A andFIG. 11B. A duct or passage 5Y zigzags through the interior of amounting table 5, and substantially uniformly cools or heats a mountingtable 5. A temperature adjusting medium, such as air or water, thatadjusts the temperature flows through the duct 5Y due to a temperatureadjusting unit (not illustrated) in the cooling and heating mechanism 7.Although not illustrated, a mounting table temperature measuring devicesuch as an infrared sensor or thermocouple is provided on the bottomsurface side of a mounting table 5 to measure the temperature thereof.

The substrates d mounted on a mounting table 5 are conveyed up to thecuring light irradiation apparatus 9 by a conveyance mechanism 19, suchas a 1-axis robot, along with the mounting table 5. The adhesive betweenthe individual substrates in the pair of substrates d is cured byirradiation of a curing light such as ultraviolet light, and thesubstrates d become bonded substrates D. The substrates D are returnedto the position shown in the figure along with the mounting table 5 bythe conveyance mechanism 19. At the position shown in the drawing, thesubstrates D are conveyed to a static eliminating mechanism 23 by asecond transfer arm 21. The static eliminating mechanism 23 blows airhaving positive or negative ions onto the substrates D, the staticelectricity on the substrates D is neutralized, and at the same time,cooling is carried out. Subsequently, the substrates D are conveyed tothe testing apparatus 11 by the third transfer arm 25.

In step S3, number n of substrates D is tested by the testing apparatus11, and in sequence, the results are input into the first deflectioncalculation unit 13B after passing through the gate C1 of the gate unit13A shown in FIG. 7. Temperature control is carried out at the initialtemperature described above until the deflection X of the n substrates Dhas been measured. When the initial temperature is set in thetemperature control unit 13H, a signal (not illustrated) is sent to thedeflection calculation and determination unit 13D, this deflectioncalculation and determination unit 13D receives this signal, and closesthe gate C1 of the gate unit 13A. At this time, the gate C2 is opened.That is, gates C1 and C2 operate at opposite phases.

In step S4, the first deflection calculation unit 13B finds the averagedeflection Xa of the deflection X of the n substrates D sent through thegate C1. This average deflection Xa is the average value of thedeflection X within a predetermined allowable range, and a deflection Xthat falls outside this range is ignored.

In step S5, the average deflection Xa of the deflection X of the nsubstrates D is sent to the deflection calculation and determinationunit 13D, and the deflection calculation and determination unit 13Ddetermines whether or not the average deflection Xa falls within thetarget range of the target deflection Xt±α. α is selected from amongvalues equal to or less than 0.1°, and preferably equal to or less then0.05°.

In step S6, if the average deflection Xa does not fall within the targetrange of the target deflection Xt±α, then the deflection calculation anddetermination unit 13D sends the deflection difference ΔX, which is thedifference between the average deflection Xa and the target deflectionXt, to the temperature control amount calculation unit 13G, and thetemperature control amount calculation unit 13G carries out thecalculation according to the function described above (ΔT−M×ΔX or thecompensated value ΔX′ thereof) from the deflection difference ΔX (or thecompensated value ΔX′ thereof), the constant of proportionality M (°C./deg) set by the proportionality constant setting device 13E, themeasured temperature Th of the input mounting table, and the measuredtemperature Td of the substrates d, calculates the temperature Tc, andsends a signal corresponding to the temperature Tc to the temperaturecontrol unit 13H.

The temperature Tc indicates the current temperature control amount, inthis case, how much the initial temperature described above is changed.The temperature control unit 13H controls the cooling and heatingmechanism 7 using a command temperature that combines the initialtemperature that has been set and the temperature Tc. When thetemperature Tc is positive, the set initial temperature is increased,and when the temperature Tc is negative, the set initial temperature isdecreased.

In step S7, a mounting table 5 is controlled so as to attain thiscommand temperature until the temperature of the mounting table 5stabilizes at this command temperature, without changing the control.When stabilized at the command temperature, the control operationdescribed above is again carried out.

If the newly found average deflection Xa does not fall within the targetrange of the target deflection Xt±α, the temperature control calculatingunit 13G again carries out the calculation according to the equationdescribed above (ΔT−M×ΔX or the compensated value ΔX′ thereof) from thedeflection difference ΔX, which is the difference between the newlyfound average deflection Xa and the target deflection Xt, the constantof proportionality M set by the proportionality constant setting unit13E, the measured temperature Th of the input mounting table 5, and themeasured temperature Td of the substrates d, calculates the temperatureTc, and controls the cooling and heating mechanism 7 using the newcommand temperature, which is a combination of the command temperaturedescribed above and the temperature Tc. This control is maintained, andwhen the mounting table stabilizes at this new command temperature,control operation is again carried out as described above, and a newaverage deflection Xa is calculated again.

In step S8, if the newly calculated average deflection Xa falls within atarget range (Xt−α≦Xa≦Xt+α) of the target deflection Xt±α, thedeflection calculation and determination unit 13D does not output asignal to the temperature control amount calculating unit 13G.Therefore, because the temperature control amount calculation unit 13Gdoes not send the temperature Tc to the temperature control unit 13H,the temperature control amount calculation unit 13G maintains the newcommand temperature, and as long as the new average deflection Xa fallswithin the target range of the target deflection Xt±α, the cooling andheating mechanism 7 is controlled using the new command temperature.

In step S9, in addition, when Xt−α≦Xa≦Xt+α, the deflection calculationand determination unit 13D switches from gate C1 in the gate unit 13A togate C2, closes gate C2, and the second deflection calculation unit 131finds the moving average value Xa by calculating the deflection X of then substrates sent through gate C2. Here, the moving average valuedenotes the average value Xa of the deflection X, which is in apredetermined allowable range, among the deflections of the most recentn substrates after curing.

While the average value Xa of this deflection X is Xt−α≦Xa≦Xt+α, thecommand temperature is not changed, and the previous command temperatureis maintained.

However, when the calculation and determination unit 13D determines thatthe most recent moving average deflection Xa does not fall within thetarget range of the target deflection Xt±α, the processing returns tothe operation of steps S6→S7→S3 in the flowchart shown in FIG. 8, andthen the operations of steps S4, S5 and after are carried out.

In this manner, the temperature control of a mounting table 5 is carriedout, and the difference between the temperature Th of a mounting table 5and the temperature Td of the substrates d, that is, the temperaturecontrol amount Tc, is found, the temperature of only a mounting table 5is controlled, and the temperature difference Tc between a mountingtable 5 and the substrates d is made equal to Tc. Thereby, thedeflection of the superposed substrates d is controlled, and it ispossible to make the deflection of the bonded substrates D after curingof the adhesive equal to a desired value.

FIG. 9 shows the state in which the deflection X of the substrates dfalls within the target range of the target deflection Xt±α as afunction of time, and approaches the set value Xt. S1 to S9 in thefigure correspond to steps S1 to S9 in the flowchart shown in FIG. 8.Steps S3 and S7 in the figure shows the stand-by time, and the arrows atstep S6 show that the deflection (tilt angle) X has largely changed inthe direction of the target deflection Xt.

Embodiment 3

In an actual bonding line for individual substrates, the individualsubstrates are conveyed to the bonding environment, the bonding requiresa predetermined amount of time or greater, and the temperature of thebonding environment is maintained substantially constant (for example,25° C.). Thus, frequently the temperature of the substrates d that aresuperposed with the adhesive interposed therebetween can be consideredto be constant.

Therefore, in this case, in the principal equation (Th2−Td2)=(Th1−Td1)−M(Xt−X1), the temperature of the substrates d is considered to beTd2=Td1, and thus the equation can be rewritten asTh2=Th1−M(Xt−X1)=Th1−M·ΔX. From this equation, simply by subtractingM·ΔX from the temperature Th1 of a mounting table when finding theconstant of proportionality M, it is possible to find the temperatureTh2 of a mounting table. In addition, by using a compensated value ΔX′,which is the deflection difference ΔX that has been compensated asdescribed above, it is possible to find the temperature Th2 of amounting table simply by subtracting M·ΔX′ from the temperature Th1 of amounting table.

As described above, the present inventors confirmed that a constant ofproportionality M is preferably a numerical value within a range from 15(° C./deg) to 40 (° C./deg), and if a constant of proportionality Mhaving a numerical value within this range is used, then the temperatureTh1 of the mounting table is known when finding the constant ofproportionality M. Thus, in the actual bonding line, both thetemperature measurement of a mounting table and a temperaturemeasurement of the substrates becomes unnecessary, and simply bymeasuring the deflection X of the substrates D and carrying out thecalculation according to the above equation, the temperature of amounting table can be controlled so as to attain any temperature.

In this embodiment, for example, the cooling capacity of the cooling andheating mechanism 7 is 2 sec/° C., the constant of proportionality M is28.5° C./deg, and the measured value X of the substrates D is 0.2 degsmaller than the setting value Xt. In this case, from the equationTh2=Th1−M(Xt−X1), Th2=Th1−5.7° C. Therefore, it is understood that Th2should be about 6° C. lower than the temperature Th1 found whencalculating the constant of proportionality M. For example, if Th1 is26° C., then Th2 should be about 20° C. Because the cooling capacity ofthe cooling and heating mechanism 7 shown in FIG. 4 and FIG. 10 is 2sec/° C., the time at this point is about 12 seconds, the temperature ofa mounting table will be substantially stabilized after the passage ofabout 12 seconds, and thus the bonding line can be operated. In thiscase, the stand-by time is approximately 12 seconds.

In addition, conventionally, when curing the adhesive in the curinglight irradiation system, there has been the problem that thetemperature of a mounting table increases due to the curing heatgenerated while the adhesive layer is being cured. However, in the casethat the embodiment 3 is realized by the apparatus shown in FIG. 10,FIG. 11A, and FIG. 11B, temperature control of a mounting table iscarried out even during the irradiation by the curing light. Thus, thereare the effects that it is possible to limit increases in thetemperature of a mounting table, make the temperature fluctuation of amounting table small, and at the same time, make temperature increasesin the substrates small.

In the above explanation, the case that the temperature of thesubstrates d was considered to be Td2=Td1, but there are also cases inwhich the temperature Th of the mounting table can also be considered tobe Th2=Th1. In this case, in the principal equation described above,(Th2−Td2)=(Th1−Td1)−M (Xt−X1), the temperature of a mounting table canbe considered to be Th2=Th1, and thus this equation can be rewritten asTd2=Td1+M(Xt−X1)=Td1+M·ΔX. From this equation, simply by adding M·ΔX tothe temperature Td1 of the substrates when finding the constant ofproportionality M, the temperature Td2 of the substrates can be found.In addition, when the compensated value ΔX′, which is the compensateddeflection difference ΔX as described above, simply by adding M·ΔX′ tothe temperature Td1 of the substrates, it is possible to find a morepreferable temperature Td2 for the substrates.

Embodiment 4

In the embodiment described above, a configuration was described inwhich the constant of proportionality M was appropriately selected fromconstants of proportionality in a range from 15 (° C./deg) to 40 (°C./deg), that is 15 (° C./deg)≦M≦40 (° C./deg). However, as described inEmbodiment 1 and Embodiment 2, there cases in which, in an actualproduction line (not illustrated), the temperature sensor that measuresthe temperature Th of a mounting table and a temperature sensor thatmeasures the temperature Td of the substrates are provided and themeasured temperature data thereof is obtained. Thus, a calculatingdevice that calculates the constant of proportionality M is provided inthe processing apparatus of the substrates, and a constant ofproportionality M suitable for the processing conditions at this timecan be found.

In this embodiment, the temperature difference ΔT between thetemperature Td of the substrates and the temperature of Th of a mountingtable is found, and at the same time, the deflection X of the substratesD after irradiation by curing light is measured. The constant ofproportionality M is found from the slope of the straight line foundfrom a combination (X, ΔT) of at least two points of the temperaturedifference ΔT and the deflection X, a combination (X, ΔT) of each of thesubstrates is added as available, and the constant of proportionality Mis updated. For example, if the straight line (a straight line identicalto the straight line represented by the linear function M′ describedabove) as described above is found from twenty combinations (X, ΔT) ofthe temperature difference ΔT and the deflection X and the constant ofproportionality M is found from the slope of this line, when thetwenty-fifth temperature difference ΔT and deflection X are found, theconstant of proportionality M is found from the twenty points of thesixth through twenty-fifth temperature difference ΔT and deflection X.When the twenty-sixth temperature difference ΔT and deflection X arefound, the constant of proportionality M is found from the twenty pointsbetween the seventh and the twenty-sixth temperature difference ΔT anddeflection T.

In this manner, while finding the constant of proportionality M bytaking into account the combinations (X, ΔT) of the temperaturedifference ΔT and the deflection X for each of the substrates, thetemperature Tc is found by carrying out the calculation of (ΔT−M×ΔX orthe compensated value ΔX′ thereof) by using the found constant ofproportionality M, as explained in embodiments 1 and 2 or embodiment 3.Thus, one or both of the temperature Th of a mounting table and thetemperature Td of the substrates can be controlled such that Tc=Th−Td.

According to the present invention, the appropriate control temperatureis found while finding sequentially the constant of proportionality M bythe measured temperature data for each of the mounting tables and eachof the substrates and the measured deflection data for each of thesubstrates. Thus, depending on the conditions at the time, it ispossible to automatically select a suitable constant of proportionalityM from a range of 15 (° C./deg)≦M≦40 (° C./deg).

Embodiment 5

In embodiment 4, the constant of proportionality M (° C./deg) is updatedfor each of the mounting tables and each of the substrates, but in thisembodiment, the measured temperature of a predetermined number (forexample, 10) substrates is extracted each time the number of theprocessed substrates reaches a predetermined number, for example, 500 or1000, and thereby the average temperature Td1 thereof is found.Similarly, the measured temperature of the substrates for the nextpredetermined number (for example, 10) is extracted, and the averagetemperature Td2 thereof is found. At the same time, the measuredtemperature of a mounting table on which the predetermined number ofsubstrates has been mounted is extracted, and the average temperatureTh1 thereof is found. Similarly, the measured temperature of themounting tables on which the next predetermined number of substrates hasbeen mounted is extracted, and the average temperature Th2 thereof isfound.

In addition, for the deflection of the substrates, the deflection datafor a predetermined number of substrates after curing, which are theobject for extraction of the measured temperature, is extracted, thepure average thereof or the average of the deflections within anallowable range is found, and the result serves as the deflection X ofthe substrates. As described above, the deflection difference ΔX thatexpresses the difference between the deflection X and the targetdeflection Xt, is found. Or, as described above, the compensated valueΔX′, which is the compensated value of the deflection difference ΔX, isfound.

As explained in embodiment 4, the constant of proportionality M at thetime can be found from the principal equation described above. In thisembodiment, the constant of proportionality M is found for each of thepredetermined number of substrates, and until the constant ofproportionality M for the next predetermined number is found, this foundconstant of proportionality M is used in order to carry out andtemperature control of either or both of each of the mounting tables oreach of the substrates. Thus, like embodiment 4, it is possible toselect automatically the constant of proportionality suitable for thevarious conditions at the time from a range of 15 (° C./deg)≦M≦40 (°C./deg).

In embodiment 4 and embodiment 5, like embodiment 3, the temperature ofthe substrates is substantially room temperature, and if the roomtemperature is constant, the temperature of the substrates is alsoconstant. Thus, it is possible to measure only the temperature of themounting table to carry out control the temperature of a mounting tableaccording to temperature Tc. There is not need to measure thetemperature of the substrates. Thereby, the control can be simplified.

Embodiment 6

In the above embodiments, control is carried out by using the constantof proportionality M (° C./deg), finding the temperature Tc, whichcontrols the warping of the substrates D according to Tc=ΔT−M×(ΔX orΔX′), so as to approach and match the target deflection Xt, and findingthe moderating temperature difference for the temperature differencebetween the present temperature of the a mounting table and thetemperature of the substrates. However, control can be carried out byfinding the temperature difference using the linear function M′ shown inFIG. 2 and FIG. 3.

In this case, as is clear from FIG. 2 and FIG. 3, the linear function M′has a slope of M when Th−Td is ΔT, and thus can be expressed by theequation ΔT=MX+a. The constant value a is the value of ΔT (ordinate)when the deflection X (abscissa) of the substrates is zero, and isdetermined by the combination of the warping of two bonded individualsubstrates, such as the deflection X of individual substrates to bebonded and the direction of warping or the like.

By inputting beforehand the linear function M′ (ΔT=MX+a) into a personalcomputer, microcontroller, or the like, or by inputting a plurality oflinear functions having predetermined constant values a1, a2, a3, . . ., an that correspond to a variety of conditions, it is possible toselect either depending on the conditions. By inputting the targetsetting value Xt into this linear function, it is possible to controlone or both of a mounting table or the substrates so that the soughttemperature difference ΔT between a mounting table and the substratescan be found automatically and the temperature difference between themounting table and the substrates becomes ΔT.

In this embodiment, it is always possible to carry out control by usingan optimal linear function M′ even if the deflection of the substratesfluctuates due to the occurrence of variation in the deflection ofindividual substrates caused by variation in moulding and sputtertechnologies, fluctuations in the ambient temperature or the like. Forexample, when control is carried out using ΔT1=M×Xt+a1, . . . (1) basedon the linear function M′ in order to make the deflection of thesubstrates equal to a target deflection Xt and the deflection X iscontrolled so as to attain the target deflection Xt and be constant, inthe case that the deflection X deviates from the set range due to somecause (the segment a changes but the slope of the linear function M′does not), the following operation is carried out by a deflectiondetermining device (not illustrated) outputting a signal.

First, the current deflection X of the measured substrates issubstituted into the linear function M′, and the temperature differenceΔT2{=M×X+a2, . . . , (2)} between the present temperature of a mountingtable and the temperature of the substrates is calculated. Because thedifference between the temperature of a mounting table and thetemperature of the substrates is controlled so as to be constant,ΔT1=ΔT2, and from equation (1) and equation (2), a2=M(Xt−X)+a1 isobtained. Therefore, by carrying out control by updating the segment a1of equation (1) to a2, it is possible to adjust the deflection X.

In the embodiment described above, only the temperature of a mountingtable is controlled, but by controlling only the temperature of thesubstrate or controlling the temperatures of both the mounting table andthe substrates, it is possible to realize the present invention, and itis possible to make the deflection of the substrates equal to thewarping value equal to the target deflection Xt. Of course, thedeflection can be made equal to zero.

In addition, the embodiment described above was explained in which thesubstrate was an substrate, but the present invention can be similarlyimplemented for other substrates that are bonded having an adhesiveinterposed therebetween, such as a glass sheet, a synthetic resin sheet,or the like.

The effect of the present invention according to each of the aspects isas follows:

1. According to the invention in aspect 1, it is possible to obtainautomatically a substrate consisting of bonded individual substrateshaving a desired deflection (tilt angle).

2. According to the invention in aspect 2, it is possible to obtainautomatically a substrate consisting of bonded individual substrateshaving a desired deflection (tilt angle) more smoothly and in a shorterperiod of time by using a compensated value ΔX′ for the deflection X ofthe substrates.

3. According to the invention in aspect 3, it is possible to obtainsimply and automatically a substrate consisting of bonded individualsubstrates presenting a desired deflection (tilt angle) withoutmeasuring the temperature of the substrates.

4. According to the invention in aspect 4, it is possible to obtainautomatically a substrate consisting of bonded individual substratespresenting a desired deflection (tilt angle) more smoothly and in ashorter period of time without measuring the temperature of thesubstrates by using a compensated value ΔX′ for the deflection X of thesubstrates and making the temperature of the substrates substantiallyconstant.

5. According to the invention in aspect 5, it is possible to obtainsimply and automatically a substrate consisting of bonded individualsubstrates presenting a desired deflection (tilt angle) by making thetemperature of a mounting table substantially constant without measuringthe temperature of a mounting table.

6. According to the invention in aspect 6, it is possible to obtainautomatically a substrate consisting of bonded individual substratespresenting a desired deflection (tilt angle) more smoothly and in ashorter period of time by using a compensated value ΔX′ for thedeflection X of the substrates and making the temperature of thesubstrates substantially constant.

7. According to the invention in aspect 7, it is possible to obtainsimply and automatically a substrate consisting of bonded individualsubstrates presenting a desired deflection (tilt angle) in an actualbonding step by finding a constant of proportionality M (° C./deg),which is the basic insight of the present invention.

8. According to the invention in aspect 8, it is possible to obtainsimply and automatically a substrate consisting of bonded individualsubstrates presenting a desired deflection (tilt angle) while obtaininga constant of proportionality M that suits the conditions duringbonding, without finding a constant of proportionality M (° C./deg),which is the basic insight of the present invention.

9. According to the invention in aspect 9, it is possible to specify apreferable range for the constant of proportionality M and select anduse the constant of proportionality M.

10. According to the invention in aspect 10, a more preferable warpingadjustment of the substrates becomes possible because it is possible tocompensate the deflection X of the substrates by using PID control.

11. According to the invention in aspect 11, it is possible do decreasethe influence of variation in the warping and carry out stabletemperature control because the average deflection of n substrates aftercuring is found, the temperature is calculated using the averagedeflection, and temperature control of a mounting table is carried outby using this temperature Tc.

12. According to the invention in aspect 12, it is possible to decreasefurther the influence of variation in the warping and carry out stabletemperature control because the amount of the noise is decreased.

13. According to the invention in aspect 13, it is possible to maintainthe temperature of a mounting table within a set range easily.

14. According to the invention in aspect 14, it is possible to carry outtemperature control of a mounting table stably by using the averages ofnew deflection data.

15. According to the invention in aspect 15, it is possible to return toa set range in a short time period without hunting in the case that theaverage deflection Xa of the substrates falls outside the set range.

16. According to the invention in aspect 16, it is possible to find thetemperature difference ΔT between a mounting table and the substratessimply by substituting the target deflection Xt into a predeterminedlinear function and carry out temperature control simply.

17. According to the invention in aspect 17, it is possible to present aprocessing apparatus for substrates that can automatically obtain bondedsubstrates having a desired deflection (tilt angle).

18. According to the invention in aspect 18, it is possible to presentan automatic processing apparatus for substrates that can obtain in ashorter period of time and more smoothly bonded substrates having adesired deflection (tilt angle).

19. According to the invention in aspect 19, it is possible to obtainsimply and automatically a substrate consisting of bonded individualsubstrates that present a desired deflection (tilt angle) withoutmeasuring the temperature of the substrates.

20. According to the invention in aspect 20, it is possible to obtainautomatically a substrate consisting of individual bonded substratespresenting a desired deflection (tilt angle) without measuring thetemperature of the substrates by using the compensated value ΔX′ of thedeflection X of the substrates and making the temperature of thesubstrates substantially constant.

21. According to the invention in aspect 21, it is possible to obtainsimply and automatically substrates consisting of bonded individualsubstrates presenting a desired deflection (tilt angle) by making thetemperature of a mounting table constant, without measuring thetemperature of the mounting table.

22. According to the invention in aspect 22, it is possible to obtainsimply and automatically substrates consisting of bonded individualsubstrates presenting a desired deflection (tilt angle) by using thecompensated value ΔX′ of the deflection X of the substrates and makingthe temperature of the mounting table substantially constant.

23. According to the invention in aspect 23, it is possible to obtainsimply and automatically a substrate consisting of bonded individualsubstrates having a desired deflection (tilt angle) in an actual bondingstep by finding a constant of proportionality M (° C./deg), which is thebasic insight of the present invention.

24. According to the invention in aspect 24, it is possible to obtainautomatically a substrate consisting of bonded individual substrateshaving a desired deflection (tilt angle) while obtaining a constant ofproportionality M suitable to the conditions during bonding withoutfinding a constant of proportionality M (° C./deg), which is the basicinsight of the present invention.

25. According to the invention in aspect 25, it is possible to specify apreferable range for the constant of proportionality M, select and usethis constant of proportionality M, and thereby simplify the apparatus.

26. According to the invention in aspect 26, it is possible to presentan apparatus in which a more preferable warping adjustment of thesubstrates is possible because the deflection X of the substrates can becompensated by using PID control.

27. According to the invention in aspect 27, it is possible do decreasethe influence of variation in the warping and carry out stabletemperature control because the average deflection of n substrates aftercuring is found, the temperature is calculated using the averagedeflection, and temperature control of a mounting table is carried outby using this temperature Tc.

28. According to the invention in aspect 28, it is possible to decreasefurther the influence of variation in the warping and carry out stabletemperature control.

29. According to the invention in aspect 29, it is possible to maintainthe temperature of a mounting table within a set range easily.

30. According to the invention in aspect 30, it is possible to carry outtemperature control of a mounting table stably by using the newestaverage of the deflection data.

31. According to the invention in aspect 31, it is possible to return toa set range in a short time period without hunting in the case that theaverage deflection Xa of the substrates falls outside the set range.

32. According to the invention in aspect 32, it is possible to find thetemperature difference ΔT between a mounting table and the substratessimply by substituting the target deflection Xt into a predeterminedlinear function and carry out temperature control simply.

While preferred embodiments of the invention have been described andillustrated above, it should be understood that these are exemplary ofthe invention and are not to be considered as limiting. Additions,omissions, substitutions, and other modifications can be made withoutdeparting from the spirit or scope of the present invention.Accordingly, the invention is not to be considered as being limited bythe foregoing description, and is only limited by the scope of theappended claims.

1. A processing method for substrates, comprising: a step in whichsubstrates before curing are mounted on a mounting table, saidsubstrates having a plurality of individual substrates and an uncuredphoto-curable adhesive layer interposed between these individualsubstrates; a step in which substrates after curing are obtainedwherein, while said substrates before curing are mounted on saidmounting table, said individual substrates are bonded together byphoto-curing said adhesive layer by irradiating said substrates beforecuring with photo-curing light; and a step in which the deflection ofsaid substrates after curing is controlled by controlling at least oneof said substrates before curing and said mounting table; the step inwhich said deflection is controlled comprises: a step in which thetemperature difference ΔT between the temperature Th of said mountingtable and the temperature Td of said substrates before curing is found;a step in which the deflection difference ΔX between the deflection X ofsaid substrates after curing and the target deflection setting value Xtis found; a step in which the temperature Tc is found by Tc=ΔT−M×ΔX byusing the constant of proportionality M determined by the correlationbetween said temperature difference ΔT and said deflection X; and a stepin which at least one of said substrates before curing and said mountingtable are temperature controlled according to said temperature Tc suchthat Tc=Th−Td.
 2. A processing method for substrates according to claim1, further comprising a step in which the compensated value ΔX′, whichis said deflection difference ΔX that has been compensated according toconditions that include the tendency of said deflection difference ΔX,is found, and where this compensated value ΔX′ serves as the value ofsaid deflection difference ΔX, said temperature Tc is found.
 3. Aprocessing method for substrates, comprising: a step in which substratesbefore curing are mounted on a mounting table, said substrates having aplurality of individual substrates and an uncured photo-curable adhesivelayer interposed between these individual substrates; a step in whichsubstrates after curing are obtained wherein, while said substratesbefore curing are mounted on said mounting table, said individualsubstrates are bonded together by photo-curing said adhesive layer byirradiating said substrates before curing with photo-curing light; and astep in which the deflection of said substrates after curing iscontrolled by controlling at least one of said substrates before curingand said mounting table; the step in which said deflection is controlledcomprises: a step in which the temperature Th of said mounting table isfound; a step in which the deflection difference ΔX between the targetdeflection setting value Xt and said deflection X is found; a step inwhich the temperature Tc is found by carrying out the calculation ofTc=Th−M×ΔX by using the constant of proportionality M determined by thecorrelation between said the temperature Th of said mounting table andsaid deflection X; and a step in which the temperature control of saidmounting table is carried out according to said temperature Tc.
 4. Aprocessing method for substrates according to claim 3, furthercomprising a step in which the compensated value ΔX′, which is saiddeflection difference ΔX that has been compensated according toconditions that include the tendency of said deflection difference ΔX,is found, and where this compensated value ΔX′ serves as the value ofsaid deflection difference ΔX, said temperature Tc is found.
 5. Aprocessing method for substrates, comprising: a step in which substratesbefore curing are mounted on a mounting table, said substrates having aplurality of individual substrates and an uncured photo-curable adhesivelayer interposed between these individual substrates; a step in whichsubstrates after curing are obtained wherein, while said substratesbefore curing are mounted on said mounting table, said individualsubstrates are bonded together by photo-curing said adhesive layer byirradiating said substrates before curing with photo-curing light; and astep in which the deflection of said substrates after curing iscontrolled by controlling at least one of said substrates before curingand said mounting table; a step in which said deflection is controlledcomprises; a step in which the temperature Td of said substrates beforecuring is found; a step in which the target deflection Xt and saiddeflection X are calculated, and the deflection difference ΔX is found;a step in which temperature Tc is found by carrying out the calculationof Tc=Td+M×ΔX by using the constant of proportionality M determined bythe correlation between the temperature Td of said substrates beforecuring and said deflection X; and a step in which temperature control ofthe temperature of said substrates before curing is carried outaccording to temperature Tc.
 6. A processing method for substratesaccording to claim 5, comprising a step in which the compensated valueΔX′, which is said deflection difference ΔX that has been compensatedaccording to conditions that include the tendency of said deflectiondifference ΔX, is found, and where this compensated value ΔX′ serves asthe value of said deflection difference ΔX, said temperature Tc isfound.
 7. A processing method for substrates according to any of claims1, 3 or 5, wherein: said constant of proportionality M (° C./deg) is aconstant of proportionality expressing the slope of a straight linefound from a plurality of combinations (X, ΔT) of the temperaturedifference ΔT between the temperature Th of said mounting table and thetemperature Td of said substrates before curing and the deflection X ofthe substrates after curing by irradiation of a curing light, and isfound in advance.
 8. A processing method for substrates according to anyof claims 1, 3, and 5, wherein: said constant of proportionality M (°C./deg) is a constant of proportionality expressing the slope of astraight line found from a plurality of combinations (X, ΔT) of thetemperature difference ΔT between the temperature Th of said mountingtable and the temperature Td of said substrates before curing and thedeflection X of the substrates after curing by irradiation of a curinglight, and the warping of said substrates is adjusted while finding saidconstant of proportionality M by updating said combination (X, ΔT) asnecessary.
 9. A processing method for substrates according to any ofclaims 1, 3, and 5, wherein said constant of proportionality M is 15 to40 (° C./deg).
 10. A processing method for substrates according to anyof claims 2, 4, and 6, wherein said deflection difference ΔX iscompensated by carrying out PID control.
 11. A processing method forsubstrates according to any of claims 1, 3, and 5, wherein saiddeflection X is an average deflection Xa that expresses the averagevalue of a predetermined number n of said substrates after curing.
 12. Aprocessing method for substrates according to claim 11, wherein saidaverage deflection Xa of said substrates after curing is a valueobtained by averaging deflections within a predetermined allowable rangeamong the deflections X of a predetermined number n of substrates aftercuring.
 13. A processing method for substrates according to claim 11,wherein said temperature of said mounting table and said substratesbefore curing is maintained without change while the average deflectionXa of said substrates after curing is within a predetermined deflectionrange (Xt±an arbitrary numerical value α).
 14. A processing method forsubstrates according to claim 11, wherein a moving average value(average value of the n most recent substrates) of the predeterminednumber n of said substrates after curing is found while the averagedeflection Xa of said substrates after curing is within a predetermineddeflection range (Xt±an arbitrary numerical value α).
 15. A processingmethod for substrates according to claim 11, wherein, when the averagedeflection Xa of said substrates after curing is outside a predetermineddeflection range (Xt± an arbitrary numerical value α), said temperatureof said mounting table and said substrates before curing is calculatedand temperature control of said mounting table and said substratesbefore curing is carried out at this calculated temperature, and themeasurement of the deflection of the predetermined number n substratesafter curing is newly carried out, and until this measurement iscompleted, temperature control of said mounting table and saidsubstrates before curing is carried out using said calculatedtemperature.
 16. A processing method for substrates, comprising: a stepin which substrates before curing are mounted on a mounting table, saidsubstrates having a plurality of individual substrates and an uncuredphoto-curable adhesive layer interposed between these individualsubstrates; a step in which substrates after curing are obtainedwherein, while said substrates before curing are mounted on saidmounting table, said individual substrates are bonded together byphoto-curing said adhesive layer by irradiating said substrates beforecuring with photo-curing light; and a step in which the deflection ofsaid substrates after curing is controlled by controlling at least oneof said substrates before curing and said mounting table; said step inwhich said deflection is controlled comprises: a step in which therelationship (Th−Td=M×X+a) is found, where the constant ofproportionality determined by the correlation of at least twocombinations of the temperature difference ΔT between the temperature Thof said mounting table and the temperature Td of said substrates beforecuring and said deflection X is denoted M, the temperature difference ΔTbetween the temperature Th of said mounting table and the temperature Tdof said substrates before curing when the deflection X of saidsubstrates after curing is zero is denoted a; and a step in which thetemperature control of at least one of said substrates after curing andsaid mounting table is carried out such that (Th−Td=M×Xt+a), where thedeflection setting value is denoted Xt.
 17. A processing apparatus forsubstrates, comprising: a mounting table for mounting substrates beforecuring, said substrates consisting of a pair of individual substrateshaving a photo-curable adhesive layer interposed therebetween; anirradiating device that irradiates said substrates before curing with acuring light while the substrates before curing are mounted on saidmounting table; and a control device for controlling the deflection ofthe substrates after curing by carrying out temperature control of atleast one of the substrates before curing and said mounting table whilesaid individual substrates are bonded together by photo-curing saidadhesive; said control device comprises: a device that calculates thetemperature difference ΔT between the temperature Th of said mountingtable and the temperature Td of said substrates before curing; a devicethat finds the deflection difference ΔX between the deflection X of saidsubstrates after curing and the target deflection setting value Xt; adevice that finds the temperature Tc by calculating Tc=ΔT−M×ΔX by usingthe constant of proportionality M determined by the correlation betweensaid temperature difference ΔT and said deflection X; and a device thatcarries out temperature control of at least one of said substratesbefore curing and said mounting table according to said temperature Tcsuch that Tc=Th−Td.
 18. A processing apparatus for substrates accordingto claim 17, comprising a compensating device that finds the compensatedvalue ΔX′, which is said deflection difference ΔX that has beencompensated according to conditions that include the tendency of saiddeflection difference ΔX, and where this compensated value ΔX′ serves asthe value of said deflection difference ΔX, finds said temperature Tc.19. A processing apparatus for substrates, comprising: a mounting tablefor mounting substrates before curing, said substrates consisting of apair of individual substrates having a photo-curable adhesive layerinterposed therebetween; an irradiating device that irradiates saidsubstrates before curing with a curing light while the substrates beforecuring are mounted on said mounting table; and a control device forcontrolling the deflection of the substrates after curing by carryingout temperature control of at least one of the substrates before curingand said mounting table while said individual substrates are bondedtogether by photo-curing said adhesive; said control device comprises: adevice that finds temperature Th of said mounting table; a device thatfinds the deflection difference ΔX by calculating the target deflectionsetting value Xt and said deflection X; a device that finds thetemperature Tc by calculating Tc=Th−M×ΔX by using the constant ofproportionality M determined by the correlation between at least twocombinations of the temperature Th of said mounting table and saiddeflection X; and a device that carries out temperature control of saidmounting table according to said temperature Tc.
 20. A processingapparatus for substrates according to claim 19, comprising a device thatfinds the compensated value ΔX′, which is said deflection difference ΔXthat has been compensated according to conditions that include thetendency of said deflection difference ΔX, and finds said temperature Tcusing the compensated value ΔX′ as the value of said deflectiondifference ΔX.
 21. A processing apparatus for substrates, comprising: amounting table for mounting substrates before curing, said substratesconsisting of a pair of individual substrates having a photo-curableadhesive layer interposed therebetween; an irradiating device thatirradiates said substrates before curing with a curing light while thesubstrates before curing are mounted on said mounting table; and acontrol device for controlling the deflection of the substrates aftercuring by carrying out temperature control of at least one of thesubstrates before curing and said mounting table when said individualsubstrates are bonded together by photo-curing said adhesive; saidcontrol device comprises: a device that finds temperature Td of saidsubstrates before curing; a device that finds the deflection differenceΔX by calculating the target deflection setting value Xt and saiddeflection X; a device that finds the temperature Tc by calculatingTc=Td+M×ΔX by using the constant of proportionality M determined by thecorrelation between at least two combinations of the temperature Td ofsaid substrates before curing and said deflection X; and a device thatcarries out temperature control of said substrates before curingaccording to said temperature Tc.
 22. A processing apparatus forsubstrates according to claim 21, further comprising: a compensatingdevice that finds the compensated value ΔX′, which is said deflectiondifference ΔX that has been compensated according to conditions thatinclude the tendency of said deflection difference ΔX, and finds saidtemperature Tc by using the compensated value ΔX′ as the value of saiddeflection difference ΔX.
 23. A processing apparatus for substratesaccording to any of claims 17, 19, and 21 wherein: said constant ofproportionality M (° C./deg) is a constant of proportionality expressingthe slope of a straight line found from the temperature difference ΔTbetween the temperature Th of said mounting table and the temperature Tdof said substrates before curing, and the deflection X after curing byirradiation of a curing light, and is found in advance.
 24. A processingapparatus for substrates according to any of claims 17, 19, and 21,wherein said constant of proportionality M (° C./deg) is a constant ofproportionality expressing the slope of a straight line found from aplurality of combinations (X, ΔT) of the temperature difference ΔTbetween the temperature Th of said mounting table and the temperature Tdof said substrates before curing and the deflection X of the substratesafter curing by irradiation of a curing light, and the warping of saidsubstrates is adjusted while finding said constant of proportionality Mby updating said combination (X, ΔT) as necessary.
 25. A processingapparatus for substrates according to any of claims 17, 19, and 21,wherein same constant of proportionality M is 15 to 40 (° C./deg).
 26. Aprocessing apparatus for substrates according to any of claims 18, 20,and 22, wherein said deflection difference ΔX is compensated by carryingout PID control.
 27. A processing apparatus for substrates according toany of claims 17, 19, and 21, wherein said deflection X is the averagedeflection Xa expressing the average number of a predetermined number nof said substrates after curing.
 28. A processing apparatus forsubstrates according to claim 27, wherein said average deflection Xa ofsaid substrates after curing is a value obtained by averagingdeflections within a predetermined allowable range among the deflectionsX of a predetermined number n of substrates after curing.
 29. Aprocessing apparatus for substrates according to claim 27, wherein saidtemperature of said mounting table and said substrates before curing ismaintained without change while the average deflection Xa of saidsubstrates after curing is within a predetermined deflection range(Xt±an arbitrary numerical value α).
 30. A processing method forsubstrates according to claim 27, wherein a moving average value(average value of the n most recent substrates) of the deflection X ofthe predetermined number n of said substrates after curing is foundwhile the average deflection Xa of said substrates after curing iswithin a predetermined deflection range (Xt±an arbitrary numerical valueα).
 31. A processing method for substrates according to claim 27,wherein, when the average deflection Xa of said substrates after curingis outside a predetermined deflection range (Xt±an arbitrary numericalvalue α), said temperature of said mounting table and said substratesbefore curing is calculated and temperature control of said mountingtable and said substrates before curing is carried out at thiscalculated temperature, the measurement of the deflection of thepredetermined number n substrates after curing is newly carried out, anduntil this measurement is completed, temperature control of saidmounting table and said substrates before curing is carried out usingsaid calculated temperature.
 32. A processing apparatus for substrates,comprising: a mounting table for mounting substrates before curing, saidsubstrates consisting of a pair of individual substrates having aphoto-curable adhesive layer interposed therebetween; an irradiatingdevice that irradiates said substrates before curing with a curing lightwhile the substrates before curing are mounted on said mounting table;and a control device for controlling the deflection of the substratesafter curing by carrying out temperature control of at least one of thesubstrates before curing and said mounting table while said individualsubstrates are bonded together by photo-curing said adhesive; saidcontrol device comprises: a device that finds the relationship(Th−Td=M×X+a), where the constant of proportionality determined by thecorrelation of at least two combinations of the temperature differenceΔT between the temperature Th of said mounting table and the temperatureTd of said substrates before curing and said deflection X is denoted M,the temperature difference ΔT between the temperature Th of saidmounting table and the temperature Td of said substrates before curingwhen the deflection X of said substrates after curing is zero is denoteda; and a device that carries out the temperature control of at least oneof said substrates after curing and said mounting table such that(Th−Td=M×Xt+a), where the deflection setting value is denoted Xt.